Document Type : Research Paper
Authors
Radiation Application Research School, Nuclear Science and Technology Research Institute, AEOI, P.O.Box: 1339-14155, Tehran - Iran
Abstract
This investigation is a computational analysis of a kind of radiation effect on electronic devices, known as the single event upset (SEU) with the Geant4 toolkit. Accordingly, the results are compared with the similar experimental work and a simulation study which is performed by CRÈME-MC Monte Carlo simulation code. Single event upsets are the most common events which abruptly change the logic state of the device (1 to 0 or vice versa) and cause a disturbance in their performance. In the simulations, low energy protons (< 10 MeV)-induced SEU cross sections in a 65 nm CMOS SRAM were calculated and various particle effectivenesses and physical mechanisms inducing upsets were studied. The analysis of the results showed that most of the upsets occur due to incident protons with energies of less than 1 MeV under the mechanism of direct ionization. This is due to the fact that protons entering the sensitive volume have the maximum stopping power. This study also revealed that for protons with energies between 2 and 10 MeV, recoiled silicon atoms have a dominant role in SEU while other particles produced in preceding layers have a negligible effect compared to the recoiled silicon produced inside the sensitive volume.
Highlights
1. K.P. Rodbell, et al, Low energy proton SEUs in 32-nm SOI SRAMs at low Vdd, IEEE Transactions on Nuclear Science, 64(3), 999-1005 (2017).
2. Petersen, Edward. Single event effects in aerospace. John Wiley & Sons (2011).
3. H. Beigzadeh Jalali, G. Raisali, A. Babazadeh, Dose and Shielding Calculation of Spacecraft in Cosmic Radiation, A novel approach, Qom University, Iran, MS Thesis (2008) (In Persian).
4. W. Yukinobu, Nuclear data relevant to single event upsets in semiconductor memories induced by cosmic-ray neutrons and protons, In Proc. Symp. Nuclear Data, SND (2006) -III. 03, 1-7 (2006).
5. R.C. Baumann, Radiation-induced soft errors in advanced semiconductor technologies, IEEE Transactions on Device and materials reliability, 5(3), 305-316 (2005).
6. B.D. Sierawski, et al, Impact of low-energy proton induced upsets on test methods and rate predictions, IEEE Transactions on Nuclear Science, 56(6), 3085-3092 (2009).
7. J.L. Barth, C.S. Dyer, E.G. Stassinopoulos, Space, atmospheric, and terrestrial radiation environments. IEEE Transactions on Nuclear Science, 466-82 (2003).
8. J.R. Schwank, M.R. Shaneyfelt, P.E. Dodd, Radiation hardness assurance testing of microelectronic devices and integrated circuits: Radiation environments, physical mechanisms, and foundations for hardness assurance, IEEE Transactions on Nuclear Science, 60(3), 2074-2100 (2013).
9. P.E. Dodd, L.W. Massengill, Basic mechanisms and modeling of single-event upset in digital microelectronics, IEEE Transactions on nuclear Science, 50(3), 583-602 (2003).
10. K.P. Rodbell, et al, Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells, IEEE Transactions on Nuclear Science, 54(6), 2474-2479 (2007).
11. N. Seifert, et al, The susceptibility of 45 and 32 nm bulk CMOS latches to low-energy protons, IEEE Transactions on Nuclear Science, 58(6), 2711-2718 (2011).
12. N.A. Dodds, et al, Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam, IEEE Transactions on Nuclear Science, 61(6), 2904-2914 (2014).
13. B. Ye, et al, Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Sep 1; 406:443-8 (2017).
14. L. Yin-Yong, et al, Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM, Chinese Physics B, 27(7), 078501 (2018).
15. A. Avraham, J. Barak, N.M. Yitzhak, Role of elastic scattering of protons, muons, and electrons in inducing single-event upsets, IEEE Transactions on Nuclear Science, 64(10), 2648-2660 (2017).
16. P.C. Caron, et al, Physical mechanisms of proton-induced Single-Event Upset in integrated memory devices, IEEE Transactions on Nuclear Science (2019).
17. N.A. Dodds, et al, The contribution of low-energy protons to the total on-orbit SEU rate, IEEE Transactions on Nuclear Science, 62(6), 2440-2451 (2015).
18. N.A. Dodds, et al, New insights gained on mechanisms of low-energy proton-induced SEUs by minimizing energy straggle, IEEE Transactions on Nuclear Science, 62(6), 2822-2829 (2015).
19. Z. Wu, et al, Recoil-ion-induced single event upsets in nanometer CMOS SRAM under low-energy proton radiation, IEEE Transactions on Nuclear Science, 64(1), 654-664 (2016).
20. Y. Bing, et al, Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell, Chinese Physics B, 26(8), 088501 (2017).
21. Geant4.10.3, released 20 October (2017) (patch-03) [online].available:// www.geant4.org.
22. B.D. Sierawski, et al, CRÈME-MC: A physics-based single event effects tool, In IEEE Nuclear Science Symposuim & Medical Imaging Conference, 1258-1261. IEEE (2010).
23. SRIM (2008) [Online]. Available: http://www.srim. org/20 (2008).
Keywords
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