Journal of Nuclear Science, Engineering and Technology (JONSAT)
In cooperation with the Iranian Nuclear Society

Calculations and analysis of effective parameters for producing a diamond sample as a maximum temperature crystal sensor

Document Type : Research Paper

Authors

M. Hassanzadeh
M.A. Amirkhani-Dehkordi
A. Rahimian
M. Asadi Asadabad

Reactor and Nuclear Safety Research School, Nuclear Science and Technology Research Institute, AEOI, P.O.BOX: 14395-836, Tehran – Iran

https://doi.org/10.24200/nst.2024.1635
Abstract
At present, Maximum Temperature Crystal Sensors (MTCS) are of great interest in the design and optimization of engines and turbines with high efficiency. These sensors are made in very small dimensions and can measure the maximum temperature in the desired location, for example inside the turbine. It is worth mentioning that a high fluence of fast neutrons is required to produce these sensors. The MTCS method is based on the high temperature phenomenon to restore changes made in the crystal lattice caused by neutron irradiation. Calculations of the maximum fast neutron flux for the diamond sample were performed using MCNP6 with the simulation of the core of the Tehran Research Reactor (TRR). Activity calculations were done using ORIGEN2, dose rate calculations through MCNP6, and temperature calculations with ANSYS software at different points of the sample. The highest fast neutron flux was calculated, and the activity of the sample decreased significantly after 40 days, with the dose rate at a distance of one meter reaching 1.4 µSv/h. Temperature calculations showed that the maximum temperature at the lowest speed of the channel was 402 K, which would not cause any thermal problems. Additionally, using the X-Ray diffraction (XRD) method, the lattice number and unit cell volume were calculated for the sample. The results obtained suggest that the diamond sample, from the perspective of neutronics, dosimetry, thermohydraulics, and changes in crystal lattice structure, can be recommended as a crystal sensor in the Tehran Research Reactor.

Highlights

  1. Volinsky A.A, Nikolaenko V, Morozov V, Timoshenko V. Irradiated Single Crystals for High Temperature Measurements in Space Applications. MRS Online Proceedings Library Archive. 2004;851.

 

  1. Rai V.K. Temperature sensors and optical sensors. Applied Physics B. 2007;88:297-303. DOI: 10.1007/s00340-007-2717-4.

 

  1. Kuryachiy V.G. Irradiated single crystal 3C-SiC as a maximum temperature sensor. 2008. DOI: 10.1557/PROC-792-R5.3.

 

  1. Haile E, Lepkowski J. Oscillator circuits for RTD temperature sensors. Application note AN8, Microchip Technology Inc. 2004;21-22.

 

  1. Volinsky A, Ginzbursky L. Irradiated cubic single crystal SiC as a high temperature sensor. Materials Research Society Symposium Proceedings. 2004;273-278. DOI: 10.1063/1.1389523.

 

  1. Nikolaenko V, Karpukhin V. Temperature measurement by means of irradiated materials. 1986.

 

  1. Sprouster D.J, Koyanagi T, Dooryhee E, Ghose S, Katoh Y, Ecker L.E. Microstructural evolution of neutron irradiated 3C-SiC. Scripta Material. 2017 Aug;137:132-136.

https://doi.org/10.1016/j. scriptamat.2017.02.030.

 

  1. Devanathan R, Weber W, Gao F. Atomic scale simulation of defect production in irradiated 3C-SiC. Journal of Applied Physics. 2001;90:2303-2309.

 

  1. Raafat A. Radiation Damage of Diamond and its Application to The Determination of the Temperature in Pile. Nuclear Research Institute. BeS near Prague. 1977.

 

  1. Pelowitz D, Goorley T, James M, Zukaitis T. MCNP6TM User’s Manual, Version 1.0. Los Alamos National Laboratory report LA-CP-13-2013; 00634.

 

  1. Croff A.G. User's manual for the ORIGEN2 computer code. Oak Ridge National Lab. 1980.

 

  1. ANSYS-Fluent. ANSYS CFD-Solver Manager User's Guide. Release 19.2, 2021.

 

  1. Krishna R, Wade J, Jones A.N, Lasithiotakis M, Mummery P.M, Marsden B.J. An understanding of lattice strain, defects and disorder in nuclear graphite. Carbon.2017;124:314-333. DOI:10.1016/j.carbon. 2017.08.070.

 

  1. Atul Sheth A.T. Uniform Crystal Temperature Sensor (Ucts) Application to Validation, Verification and Technical Comparison Processes. 2015. DOI:10.1115/GT2012-68197.

 

  1. Meijer G.C, Wang G, Fruett F. Temperature sensors and voltage references implemented in CMOS technology. IEEE Sensors Journal. 2001;1:225-234. DOI:10.1109/JSEN.2001.954835.

 

  1. Du Z, Deng Z, Cui X, Xiao A. Deformation behavior and properties of 7075 aluminum alloy under electromagnetic hot forming. Materials 14. 2021;17:49-54. DOI. 10.3390/ma14174954.

Keywords

Maximum temperature sensor
Diamond
MCNP6
ORIGEN
ANSYS
Flux
Dose rate
Lattice parameter
  1. Volinsky A.A, Nikolaenko V, Morozov V, Timoshenko V. Irradiated Single Crystals for High Temperature Measurements in Space Applications. MRS Online Proceedings Library Archive. 2004;851.

 

  1. Rai V.K. Temperature sensors and optical sensors. Applied Physics B. 2007;88:297-303. DOI: 10.1007/s00340-007-2717-4.

 

  1. Kuryachiy V.G. Irradiated single crystal 3C-SiC as a maximum temperature sensor. 2008. DOI: 10.1557/PROC-792-R5.3.

 

  1. Haile E, Lepkowski J. Oscillator circuits for RTD temperature sensors. Application note AN8, Microchip Technology Inc. 2004;21-22.

 

  1. Volinsky A, Ginzbursky L. Irradiated cubic single crystal SiC as a high temperature sensor. Materials Research Society Symposium Proceedings. 2004;273-278. DOI: 10.1063/1.1389523.

 

  1. Nikolaenko V, Karpukhin V. Temperature measurement by means of irradiated materials. 1986.

 

  1. Sprouster D.J, Koyanagi T, Dooryhee E, Ghose S, Katoh Y, Ecker L.E. Microstructural evolution of neutron irradiated 3C-SiC. Scripta Material. 2017 Aug;137:132-136.

https://doi.org/10.1016/j. scriptamat.2017.02.030.

 

  1. Devanathan R, Weber W, Gao F. Atomic scale simulation of defect production in irradiated 3C-SiC. Journal of Applied Physics. 2001;90:2303-2309.

 

  1. Raafat A. Radiation Damage of Diamond and its Application to The Determination of the Temperature in Pile. Nuclear Research Institute. BeS near Prague. 1977.

 

  1. Pelowitz D, Goorley T, James M, Zukaitis T. MCNP6TM User’s Manual, Version 1.0. Los Alamos National Laboratory report LA-CP-13-2013; 00634.

 

  1. Croff A.G. User's manual for the ORIGEN2 computer code. Oak Ridge National Lab. 1980.

 

  1. ANSYS-Fluent. ANSYS CFD-Solver Manager User's Guide. Release 19.2, 2021.

 

  1. Krishna R, Wade J, Jones A.N, Lasithiotakis M, Mummery P.M, Marsden B.J. An understanding of lattice strain, defects and disorder in nuclear graphite. Carbon.2017;124:314-333. DOI:10.1016/j.carbon. 2017.08.070.

 

  1. Atul Sheth A.T. Uniform Crystal Temperature Sensor (Ucts) Application to Validation, Verification and Technical Comparison Processes. 2015. DOI:10.1115/GT2012-68197.

 

  1. Meijer G.C, Wang G, Fruett F. Temperature sensors and voltage references implemented in CMOS technology. IEEE Sensors Journal. 2001;1:225-234. DOI:10.1109/JSEN.2001.954835.

 

  1. Du Z, Deng Z, Cui X, Xiao A. Deformation behavior and properties of 7075 aluminum alloy under electromagnetic hot forming. Materials 14. 2021;17:49-54. DOI. 10.3390/ma14174954.

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