In cooperation with the Iranian Nuclear Society

Design and simulation of the helicon plasma system with 1.5 kW RF power and 13.56 MHz frequency

Document Type : Research Paper

Authors

Abstract
In this paper, a Helicon plasma system with Nagoya Type III antenna was designed and simulated by using COMSOL Multiphysics 5.2. In our simulation, all effective interactions and parameters in the plasma production process are considered. Besides, the cross-sections of the reactions which are occurred in the plasma with the energy range from 0.001 eV to 1MeV are applied in the software. Meanwhile, the Argon-Helicon plasma is produced by using Nagoya Type III antenna considering the following conditions: the magnetic field of 600 G, the antenna current 6 Ampere, with the operating gas pressure 10 mTorr and inlet gas flux of 50 (SCCM). Finally, the plasma density of the order 2×1018 m-3 and a temperature of 2.6 eV were obtained by using the Nagoya antenna. The effect of the variations of the current, which was applied to the Nagoya antenna, on the density and absorbed power of the Helicon plasma was also investigated. This simulation was made for seven operational helicon devices, and the results have seemed reasonable.
 

Highlights

 

 

1. F.F. Chen, In Advanced Plasma Technology, ed. by R. d’Agostino, P. Favia, H. Ikegami, Y. Kawai, N. Sato and F. Arefi-Khonsari (Wiley-VCH, Berlin, 2006), Chap. 6.

2. Y.S. Hwang, I.S. Hong, G.S. Eom, Review of scientific instruments,69, 3, 1344-1348 (1998).

3. F.F. Chen, IEEE Transactions on plasma science, 36, 5, 2095-2110 (2008).

4. F.F. Chen, Plasma Physics and Controlled Fusion,33, 4, 339 (1991).

5. F.F. Chen, Physica Scripta 1990.T,30, 14 (1990).

6. F.F. Chen, Electrical Engineering Department, University of California, Los Angeles, CA 90095–1594, USA.

7. F.F. Chen, Plasma Sources Science and Technology, 21, 5, 055013 (2012).

8. O.V. Braginskii, A.N. Vasil’eva, A.S. Kovalev, Plasma Physics Reports, 27, 8, 699-707 (2001).

9. M. Light, F.F. Chen, Physics of Plasmas, 2, 4, 1084-1093 (1995).

10. A.R. Ellingboe, R.W. Boswell, Physics of Plasmas, 3, 7, 2797-2804 (1996).

11. F.F. Chen, R.W. Boswell, IEEE Transactions on Plasma Science, 25, 6, 1245-1257 (1997).

12. Y. Mouzouris, J.E. Scharer, Physics of Plasmas, 5, 12, 4253-4261 (1998).

13. F.F. Chen, University of Los Angeles Report LTP-806 June, (1998).

14. R.L. Stenzel, J.M. Urrutia, Physics of Plasmas, 23, 9, 092103 (2016).

15. A. Ganguli, R.D. Tarey, Indian Institute of Technology Delhi, New Delhi 110 016, India, CURRENT SCIENCE, 3, 10, 83 (2002).

16. D. Melazzi, V. Lancellotti, Plasma Sources Science and Technology, 24, 2, 025024 (2015).

17. I.V. Kamenski, G.G. Borg, Physics of Plasmas, 3, 12, 4396-4409 (1996).

18. F.F. Chen, Physics of Plasmas, 3, 5, 1783-1793 (1996).

19. T. Windisch, K. Rahbarnia, O. Grulke, T. Klinger, Plasma Sources Science and Technology, 19, 5, 055002 (2010).

20. C.A. Lee, G. Chen, A.V. Arefiev, R.D. Bengtson, B.N. Breizman, Physics of Plasmas,18, 013501 (2011).

21. G. Chen, A.V. Arefiev, R.D. Bengtson, B.N. Breizman, C.A. Lee, L.L. Raja, Physics of plasmas, 13, 123507 (2006).

22. A.W. Molvik, T.D. Rognlien, J.A. Byers, R.H. Cohen, A.R. Ellingboe, E.B. Hooper, H.S. McLean, B.W. Stallard, P.A. Vitello, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 14, 984 (1996).

23. X.M. Guo, J. Scharer, Y. Mouzouris, L. Louis, Physics of Plasmas, 6, 3400 (1999).

24. F.A.N.G. Tong-Zhen, W. Long, J. Di-Ming, Z. Hou-Xian, Chinese Physics Letters, 18, 1098 (2001).

Keywords


 
 
1. F.F. Chen, In Advanced Plasma Technology, ed. by R. d’Agostino, P. Favia, H. Ikegami, Y. Kawai, N. Sato and F. Arefi-Khonsari (Wiley-VCH, Berlin, 2006), Chap. 6.
2. Y.S. Hwang, I.S. Hong, G.S. Eom, Review of scientific instruments,69, 3, 1344-1348 (1998).
3. F.F. Chen, IEEE Transactions on plasma science, 36, 5, 2095-2110 (2008).
4. F.F. Chen, Plasma Physics and Controlled Fusion,33, 4, 339 (1991).
5. F.F. Chen, Physica Scripta 1990.T,30, 14 (1990).
6. F.F. Chen, Electrical Engineering Department, University of California, Los Angeles, CA 90095–1594, USA.
7. F.F. Chen, Plasma Sources Science and Technology, 21, 5, 055013 (2012).
8. O.V. Braginskii, A.N. Vasil’eva, A.S. Kovalev, Plasma Physics Reports, 27, 8, 699-707 (2001).
9. M. Light, F.F. Chen, Physics of Plasmas, 2, 4, 1084-1093 (1995).
10. A.R. Ellingboe, R.W. Boswell, Physics of Plasmas, 3, 7, 2797-2804 (1996).
11. F.F. Chen, R.W. Boswell, IEEE Transactions on Plasma Science, 25, 6, 1245-1257 (1997).
12. Y. Mouzouris, J.E. Scharer, Physics of Plasmas, 5, 12, 4253-4261 (1998).
13. F.F. Chen, University of Los Angeles Report LTP-806 June, (1998).
14. R.L. Stenzel, J.M. Urrutia, Physics of Plasmas, 23, 9, 092103 (2016).
15. A. Ganguli, R.D. Tarey, Indian Institute of Technology Delhi, New Delhi 110 016, India, CURRENT SCIENCE, 3, 10, 83 (2002).
16. D. Melazzi, V. Lancellotti, Plasma Sources Science and Technology, 24, 2, 025024 (2015).
17. I.V. Kamenski, G.G. Borg, Physics of Plasmas, 3, 12, 4396-4409 (1996).
18. F.F. Chen, Physics of Plasmas, 3, 5, 1783-1793 (1996).
19. T. Windisch, K. Rahbarnia, O. Grulke, T. Klinger, Plasma Sources Science and Technology, 19, 5, 055002 (2010).
20. C.A. Lee, G. Chen, A.V. Arefiev, R.D. Bengtson, B.N. Breizman, Physics of Plasmas,18, 013501 (2011).
21. G. Chen, A.V. Arefiev, R.D. Bengtson, B.N. Breizman, C.A. Lee, L.L. Raja, Physics of plasmas, 13, 123507 (2006).
22. A.W. Molvik, T.D. Rognlien, J.A. Byers, R.H. Cohen, A.R. Ellingboe, E.B. Hooper, H.S. McLean, B.W. Stallard, P.A. Vitello, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 14, 984 (1996).
23. X.M. Guo, J. Scharer, Y. Mouzouris, L. Louis, Physics of Plasmas, 6, 3400 (1999).
24. F.A.N.G. Tong-Zhen, W. Long, J. Di-Ming, Z. Hou-Xian, Chinese Physics Letters, 18, 1098 (2001).