نوع مقاله : مقاله پژوهشی
نویسندگان
1 پژوهشکده فوتونیک و فناوریهای کوانتومی، پژوهشگاه علوم و فنون هستهای، سازمان انرژی اتمی، صندوق پستی: 836-14395، تهران- ایران
2 گروه ماده چگال، دانشکده فیزیک، دانشگاه الزهراء (س)، کدپستی: 1993893973، تهران- ایران
کلیدواژهها
عنوان مقاله English
نویسندگان English
In this research, ultraviolet (UV) photodetectors based on aligned ZnO nanorods thin films with controllable responsivity were fabricated. Aligned nanorods were grown on seeded glass substrates by the chemical bath method. Then, they were characterized using a Scanning Electron Microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Energy Dispersive X-ray Analysis (EDAX). The effect of perimeter and area variation of interdigitated electrodes on the responsivity of UV ZnO nanorods-based photodetector was investigated. With a decreasing electrode perimeter and maintaining the same area, the responsivity decreases. By keeping the perimeter constant at the maximum value, it is observed that the response of the photodetector is increased with increasing the gap between the fingers of the electrode so that the gap of 160 µm reaches the maximum as high as 105 AW-1 at 2 V bias voltage. The dominant mechanism for change of responsivity with electrode geometry is variation in the area of depletion regions resulting from Schottky barriers between ZnO and Au and the formed barriers between ZnO nanorods due to adsorption and desorption of oxygen species. This research demonstrates a simple way of optimizing photodetector devices' responsivity for practical applications.
کلیدواژهها English
(3-hexylthiophene-2, 5-diyl) layers. Sensors. 2014;14:4484-4494.