نوع مقاله : مقاله پژوهشی
نویسندگان
1 گروه فیزیک دانشگاه پیام نور مشهد
2 گروه فیزیک دانشگاه حکیم سبزواری
3 گروه فیزیک دانشگاه فنی حرفهای مشهد
کلیدواژهها
موضوعات
عنوان مقاله English
نویسندگان English
In this study, to ensure accurate calculation of betavoltaic battery parameters, the accumulated energy deposition from the beta spectrum of a nickel-63 (⁶³Ni) source was simulated using the Geant4 toolkit for 10⁹ particles. Subsequently, the circuit parameters in a silicon semiconductor were calculated with COMSOL, considering an intrinsic impurity concentration of nᵢ = 1×10¹⁵ cm⁻³ and impurity concentrations Nd = 3.16×10¹⁶ cm⁻³ for n-type and Na = 1×10¹⁹ cm⁻³ for p-type regions. Simulations were performed at an activity level of 2.9 mCi to compare the results with theoretical models and to validate the methodology. The obtained values were 27.31 nA for the short-circuit current and 445.19 mV for the open-circuit voltage. Additional simulations were carried out for activity levels ranging from 0.1 to 10 mCi. From the obtained maximum output power values, it can be concluded that considering the battery geometry and the minimization of source self-absorption effects, the circuit parameters of nanowire-based betavoltaic batteries are enhanced compared with planar batteries at identical activity levels and it is anticipated that optimized nanowire geometries will progressively surpass the performance of current commercial planar betavoltaic batteries.
کلیدواژهها English
